Flexoelectric effect is an effect widely existing in solid materials, including dielectric, semiconductor, conductor and two-dimensional materials, especially for ultra-thin materials (which can produce greater deflection). Considering that functional oxide thin films are of great potential for many applications like flexible … See more BTO films were grown on single-layer graphene-covered Ge substrates with surface orientations of (001) and (011). The graphene monolayers were directly … See more In order to further investigate the surface passivation role of graphene monolayer, the 90 nm-thick BTO films directly grown on Ge (011) substrates using exactly the … See more From the heteroepitaxy point of view, it is of great interest to understand the growth mode and the strain relaxation of remote epitaxial BTO3-δ films on Ge (011). … See more Considering that the van der Waals force existing at the interface of BTO3-δ/graphene/Ge is rather weak, the potential of the exfoliation of remote epitaxial BTO3-δ … See more WebHighly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge Article Full-text available May 2024 Liyan Dai Jinyan Zhao Jingrui Li [...] Gang Niu The integration of …
Remote epitaxy through graphene enables two-dimensional
WebThe transferred BTO3-δ films possess enhanced flexoelectric properties with a gauge factor of as high as 1127. These results not only expand the understanding of heteroepitaxy, but … WebMar 19, 2024 · Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si … imperativ synonymum
Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ …
WebDec 12, 2012 · Furthermore, using conductive atomic force microscopy, we found that the flexoelectric effect can govern the local transport characteristics, including spatial conduction inhomogeneities, in thin-film epitaxy systems. Consideration of the flexoelectric effect will improve understanding of the charge conduction mechanism at the nanoscale … WebJun 14, 2024 · In this study, we develop a mixed finite element method (FEM) for the study of problems with both strain gradient elasticity (SGE) and flexoelectricity being taken into account. To use C 0 continuous elements in mixed FEM, the kinematic relationship between displacement field and its gradient is enforced by Lagrangian multipliers. Besides, four ... WebJul 20, 2024 · The direct measurement of flexoelectric coefficients in epitaxial thin films is an unresolved problem, due to the clamping effect of substrates which induces a net strain (and hence parasitic piezoelectricity) in addition to strain gradients and flexoelectricity. imperative words ks2